Each junction, emitter-base and base-collector characterized by their built-in energy barriers of height E Eb and E Cb, respectively. The bipolar junction transistor is constituted by two adjacent pn junctions where the charge transport through one of them might have an important effect on the charge transport through the other. Using commercial silicon transistors at the water triple point, the method here described extracts the transistor temperature with an error of a few milli-Kelvin. Furthermore, it results that the extracted temperature is independent of every transistor physical parameter constituting a primary thermometer. 10 Here it will be demonstrated that under particular bias conditions the collector current of a bipolar junction transistor indeed provides a probe of the energy distribution of the transistor free charge carrier gases from whose behavior its temperature can be extracted through a rigorous mathematical method. 6 Other propositions have been made, although, without providing a method to extract the transistor temperature. Although systematically resulting low accurate. 4–10 Mainly since the proposition of Verster who showed that using two collector currents: I C 1( V EB 1) and I C 2( V EB 2), and their corresponding emitter-base voltages: V EB 1 and V EB 2, the transistor temperature could be obtained directly. 1–3 Based on this property since their early discovery, they have been used as temperature change detectors and as thermometers although with low accuracy, even when calibrated. The charge transport properties of Bipolar Junction Transistors ( BJT) function of their free carrier concentration, mobility and diffusivity are temperature dependent, as these parameters are temperature dependent as well.
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